View NCP5314_4107250.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NCP5314 Two/Three/Four-Phase Buck CPU Controller
The NCP5314 provides full-featured and flexible control for the latest high-performance CPUs. The IC can be programmed as a two-, three- or four-phase buck controller, and the per-phase switching frequency can be as high as 1.2 MHz. Combined with external gate drivers and power components, the controller implements a compact, highly integrated multi-phase buck converter. Enhanced V2TM control inherently compensates for variations in both line and load, and achieves current sharing between phases. This control scheme provides the industry's fastest transient response, reducing the need for large banks of output capacitors and higher switching frequency. The controller meets VR(M)10.x specifications with all the required functions and protection features. Features * Switching Regulator Controller Programmable 2/3/4 Phase Operation Lossless Current Sensing Enhanced V2 Control Method Provides Fast Transient Response Programmable Up to 1.2 MHz Switching Frequency Per Phase 0 to 100% Adjustment of Duty Cycle Programmable Adaptive Voltage Positioning Reduces Output Capacitor Requirements Programmable Soft Start * Current Sharing Differential Current Sense Pins for Each Phase Current Sharing Within 10% Between Phases * Protection Features Programmable Pulse-by-Pulse Current Limit for Each Phase "111110" and "111111" DAC Code Fault Latching Off Overvoltage Protection Programmable Latching Overcurrent Protection Undervoltage Lockout External Enable Control Three-State MOSFET Driver Control through Driver-On Signal * System Power Management 6-Bit DAC with 0.5% Tolerance Compatible with VR(M)10.x Specification Programmable Lower Power Good Threshold Power Good Output
http://onsemi.com MARKING DIAGRAMS
32 1
32 PIN QFN, 7 x 7 mm MN SUFFIX CASE 485J (Bottom View)
NCP5314 AWLYYWW
LQFP-32 FTB SUFFIX CASE 873A
NCP5314 AWLYYWW
32 1
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week Text orientation may vary.
PIN CONNECTIONS (Top View)
VID1 VID0 VID5 ENABLE CS2N CS2P CS1N CS1P VID2 VID3 VID4 PWRLS VFFB SS PWRGD DRVON 32 31 30 29 28 27 26 25 24 1 23 2 22 3 21 4 20 5 19 6 18 7 17 8 9 10 11 12 13 14 15 16 SGND VDRP VFB COMP CS4N CS4P CS3N CS3P ILIM ROSC VCC GATE1 GATE2 GATE3 GATE4 GND
ORDERING INFORMATION
Device NCP5314MNR2 NCP5314FTR2 *7 x 7 mm
(c) Semiconductor Components Industries, LLC, 2003
Package 32 Pin QFN* LQFP-32*
Shipping 2000 Tape & Reel 2000 Tape & Reel
1
May, 2003 - Rev. 7
Publication Order Number NCP5314/D
LIN ATX 12 V CIN 12 V 3.3 V 1.5 k Typ ENABLE VID5 VID0 VID1 CCS2 RCS1 CCS1 RCS2
6 VS 4 CO 5 EN 8 +
BST TG DRN PGND BG NCP5355
3 2 1 7
L01
+
Figure 1. Application Diagram, 12 V to 0.8 V - 1.6 V, Four-Phase Converter
VCORE GND COUT
32
31
30
29
28
27
26
25
ROSC1 ILIM 24
23 22 21 20 19 18 17
VID2 VID3 VID4 3.3 V 1.5 k Typ PWRGD CSS
1 2 3 4 5 6 7 8
VID2 VID3 VID4 PWRLS VFFB SS PWRGD DRVON
VID1 VID0 VID5 ENABLE CS2N CS2P CS1N CS1P
NCP5314
ROSC VCC GATE1 GATE2 GATE3 GATE4 GND
ROSC2
6 VS 4 CO 5 EN 8
BST TG DRN PGND BG NCP5355
3 2 1 7
L02
http://onsemi.com
NCP5314
SGND VDRP VFB COMP CS4N CS4P CS3N CS3P
10
12
13
14
15
16
11
9
CAMP
R1
R2
SGND Near Socket VFFB Connection
Rdrp
2
RCS3 CCS3 CCS4 RCS4
6 VS 4 CO 5 EN 8
BST TG DRN PGND BG NCP5355
3 2 1 7
L03
Rfb
6 VS 4 CO 5 EN 8
BST TG DRN PGND BG NCP5355
3 2 1 7
L04
NCP5314
MAXIMUM RATINGS
Rating Operating Junction Temperature Lead Temperature Soldering, Reflow (Note 1) Storage Temperature Range ESD Susceptibility: Human Body Model JEDEC Moisture Sensitivity Level (MSL): LQFP QFN Package Thermal Resistance: RJA 1. 60 second maximum above 183C. LQFP QFN, Pad Soldered to PCB Value 150 230 peak -65 to 150 2.0 1 2 52 34 Unit C C C kV C/W
MAXIMUM RATINGS
Pin Number 1-3, 30-32 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18-21 22 23 24 25 26 27 28 29 Pin Symbol VID0-V ID5 PWRGDS VFFB SS PWRGD DRVON SGND VDRP VFB COMP CS4N CS4P CS3N CS3P GND GATE4-GA TE1 VCC ROSC ILIM CS1P CS1N CS2P CS2N ENABLE VMAX 18 V 7.0 V 7.0 V 7.0 V 18 V 7.0 V 1.0 V 7.0 V 7.0 V 7.0 V 18 V 18 V 18 V 18 V 18 V 18 V 7.0 V 7.0 V 18 V 18 V 18 V 18 V 18 V VMIN -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -1.0 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V -0.3 V ISOURCE 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 0.4 A, 1.0 s, 100 mA DC 0.1 A, 1.0 s, 25 mA DC 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA ISINK 1.0 mA 1.0 mA 1.0 mA 1.0 mA 20 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 0.1 A, 1.0 s, 25 mA DC 0.4 A, 1.0 s, 100 mA DC 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA 1.0 mA
http://onsemi.com
3
NCP5314
VOLTAGE IDENTIFICATION (VID)
VID Pins (0 = low, 1 = high) VID4 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VID3 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 VID2 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 VID1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 VID0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 VID5 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1.1000 1.1125 1.1250 1.1375 1.1500 1.1625 1.1750 1.1875 1.2000 1.2125 1.2250 1.2375 1.2500 1.2625 1.2750 1.2875 1.0746 1.0870 1.0995 1.1119 1.1244 1.1368 1.1492 1.1617 1.1741 1.1865 1.1990 1.2114 1.2239 1.2363 1.2487 1.2612 VID Code* Code (V) 0.8375 0.8500 0.8625 0.8750 0.8875 0.9000 0.9125 0.9250 0.9375 0.9500 0.9625 0.9750 0.9875 1.0000 1.0125 1.0250 1.0375 1.0500 1.0625 1.0750 1.0875 -0.5% 0 5% 0.8134 0.8259 0.8383 0.8507 0.8632 0.8756 0.8880 0.9005 0.9129 0.9254 0.9378 0.9502 0.9627 0.9751 0.9875 1.0000 1.0124 1.0249 1.0373 1.0497 1.0622 OFF OFF 1.0800 1.0925 1.1050 1.1175 1.1300 1.1425 1.1550 1.1675 1.1800 1.1925 1.2050 1.2175 1.2300 1.2425 1.2550 1.2675 1.0854 1.0980 1.1105 1.1231 1.1357 1.1482 1.1608 1.1733 1.1859 1.1985 1.2110 1.2236 1.2362 1.2487 1.2613 1.2738 VOUT No Load (V) 0.8175 0.8300 0.8425 0.8550 0.8675 0.8800 0.8925 0.9050 0.9175 0.9300 0.9425 0.9550 0.9675 0.9800 0.9925 1.0050 1.0175 1.0300 1.0425 1.0550 1.0675 +0.5% +0 5% 0.8216 0.8342 0.8467 0.8593 0.8718 0.8844 0.8970 0.9095 0.9221 0.9347 0.9472 0.9598 0.9723 0.9849 0.9975 1.0100 1.0226 1.0352 1.0477 1.0603 1.0728
*VID Code is for reference only. VOUT No Load is the input to the error amplifier.
http://onsemi.com
4
NCP5314
VOLTAGE IDENTIFICATION (VID) (continued)
VID Pins (0 = low, 1 = high) VID4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 VID3 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 VID2 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 VID1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 VID0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 VID5 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 VID Code* (V) 1.3000 1.3125 1.3250 1.3375 1.3500 1.3625 1.3750 1.3875 1.4000 1.4125 1.4250 1.4375 1.4500 1.4625 1.4750 1.4875 1.5000 1.5125 1.5250 1.5375 1.5500 1.5625 1.5750 1.5875 1.6000 -0.5% 1.2736 1.2860 1.2985 1.3109 1.3234 1.3358 1.3482 1.3607 1.3731 1.3855 1.3980 1.4104 1.4229 1.4353 1.4477 1.4602 1.4726 1.4850 1.4975 1.5099 1.5224 1.5348 1.5472 1.5597 1.5721 VOUT No Load (V) 1.2800 1.2925 1.3050 1.3175 1.3300 1.3425 1.3550 1.3675 1.3800 1.3925 1.4050 1.4175 1.4300 1.4425 1.4550 1.4675 1.4800 1.4925 1.5050 1.5175 1.5300 1.5425 1.5550 1.5675 1.5800 +0.5% 1.2864 1.2990 1.3115 1.3241 1.3367 1.3492 1.3618 1.3743 1.3869 1.3995 1.4120 1.4246 1.4372 1.4497 1.4623 1.4748 1.4874 1.5000 1.5125 1.5251 1.5377 1.5502 1.5628 1.5753 1.5879
*VID Code is for reference only. VOUT No Load is the input to the error amplifier.
http://onsemi.com
5
NCP5314
ELECTRICAL CHARACTERISTICS (0C < TA < 70C; VCC = 12 V; CGATEx = 100 pF, CCOMP = 0.01 F, CSS = 0.1 F, CVCC = 0.1 F, RROSC = 32.4 k, V(ILIM) = 1.0 V, DAC Code 010100; unless otherwise noted)
Characteristic VID Inputs Input Threshold VID Pin Current SGND Bias Current SGND Voltage Compliance Range Power Good Upper Threshold, Offset from No Load Set Point Lower Threshold Constant Output Low Voltage Delay Overvoltage Protection OVP Threshold above VID Enable Input Start Threshold Stop Threshold Hysteresis Input Pull-Up Voltage Input Pull-Up Resistance Voltage Feedback Error Amplifier VFB Bias Current COMP Source Current COMP Sink Current Transconductance Open Loop DC Gain Unity Gain Bandwidth PSRR @ 1.0 kHz COMP Max Voltage COMP Min Voltage PWM Comparators Minimum Pulse Width Measured from CSxP to GATEx, VFB = CSxN = 0.5, COMP = 0.5 V, 60 mV step between CSxP and CSxN; Measure at GATEx = 1.0 V Measured from CSxN to GATEx, COMP = 2.1 V, CSxP = CSxN = 0.5 V, CSxN stepped from 1.2 V to 2.0 V CSxP = CSxN = VFB = 0, Measure Vcomp when GATEx switch high 50% duty cycle 40 100 ns VFB = 0 V VFB = 1.6 V COMP = 0.5 V to 2.0 V (Note 2) (Note 2) CCOMP = 30 pF (Note 2) (Note 2) 40 40 1.1 72 2.4 0.1 70 70 1.3 80 4.0 60 2.7 50 1.0 100 100 1.5 150 A A A mmho dB MHz dB V mV 1.0 M to GND Gates switching, SS high Gates not switching, SS low 0.6 0.4 2.7 7.0 0.7 0.5 200 2.9 10 0.8 0.6 3.3 20 V V mV V k 170 200 250 mV PWRGDS/No Load Set Point VFFB = 1.0 V, IPWRGD = 4.0 mA VFFB low to PWRGD low 85 0.475 50 100 0.500 0.15 232 115 0.525 0.40 600 mV V/V V s VID5, VID4, VID3, VID2, VID1, VID0 VID5, VID4, VID3, VID2, VID1, VID0 = 0 V SGND < 300 mV, All DAC Codes 400 10 -200 600 0.1 20 800 1.0 40 300 mV A A mV Test Conditions Min Typ Max Unit
Transient Response Time
-
40
60
ns
Channel Start-Up Offset Artificial Ramp Amplitude MOSFET Driver Enable (DRVON) Output High Output Low Pull-Down Resistance Source Current
0.35 -
0.62 100
0.75 -
V mV
DRVON floating DRVON = 1.5 V, ENABLE = 0 V, R = 1.5 V/I(DRVON) DRVON = 1.5 V
2.3 35 0.5
70 3.0
0.2 140 6.5
V V k mA
2. Guaranteed by design, not tested in production.
http://onsemi.com
6
NCP5314
ELECTRICAL CHARACTERISTICS (continued) (0C < TA < 70C; VCC = 12 V; CGATEx = 100 pF, CCOMP = 0.01 F, CSS = 0.1 F, CVCC = 0.1 F, RROSC = 32.4 k, V(ILIM) = 1.0 V, DAC Code 010100; unless otherwise noted)
Characteristic GATES High Voltage Low Voltage Rise Time GATE Fall Time GATE Oscillator Switching Frequency ROSC Voltage Phase Delay, 3 Phases Phase Delay, 4 Phases Phase Disable Threshold Adaptive Voltage Positioning VDRP Output Voltage to DACOUT Offset Current Sense Amplifier to VDRP Gain VDRP Source Current VDRP Sink Current Soft Start Charge Current Discharge Current COMP Pull-Down Current Current Sensing and Overcurrent Protection CSxP Input Bias Current CSxN Input Bias Current Current Sense Amp to PWM Gain Current Sense Amp to PWM Bandwidth Current Sense Amp to ILIM Gain Current Sense Amp to ILIM Bandwidth Current Limit Filter Slew Rate ILIM Input Bias Current Pulse-by-Pulse Current Limit Threshold Voltage Current Sense Common Mode Input Range General Electrical Specifications VCC Operating Current UVLO Start Threshold UVLO Stop Threshold UVLO Hysteresis COMP = 0.3 V (no switching) SS charging, GATEx switching GATEx not switching, SS & COMP discharging Start - Stop 8.5 7.5 0.8 27 9.0 8.0 1.0 35 9.5 8.5 1.2 mA V V V ILIM = 0 V V(CSxP) - V(CSxN) (Note 2) CSxN = CSxP = 0 V CSxN = CSxP = 0 V CSxN = 0 V, CSxP = 80 mV, Measure V(COMP) when GATEx switches high (Note 2) IO/(CSxP - CSxN), ILIM = 0.6 V, GATEx not switching (Note 2) (Note 2) 2.85 2.0 80 0 0.1 0.1 3.1 7.0 3.30 1.0 5.0 0.1 90 1.0 1.0 3.65 13 1.0 110 2.0 A A V/V MHz V/V MHz mV/ms A mV V 30 90 0.2 44 120 0.9 50 150 2.1 A A mA CSxP = CSxN, VFB = COMP, Measure VDRP - COMP CSxP - CSxN = 80 mV, VFB = COMP, Measure VDRP - COMP -15 2.25 1.0 0.2 2.54 7.0 0.4 15 2.75 14 0.6 mV V/V mA mA ROSC = 32.4 k, 3 Phase (Note 2) ROSC = 32.4 k, 4 Phase (Note 2) VCC = CS4P = CS4N VCC - (CS4P = CS4N) -15% -15% 0.95 500 880 660 1.02 120 90 +15% +15% 1.05 kHz V deg deg mV Measure GATEx, IGATEx = 1.0 mA Measure GATEx, IGATEx = 1.0 mA 0.8 V < GATEx < 2.0 V, VCC = 10 V 2.0 V > GATEx > 0.8 V, VCC = 10 V 2.70 0.5 5.0 5.0 0.7 10 10 V V ns ns Test Conditions Min Typ Max Unit
2. Guaranteed by design, not tested in production.
http://onsemi.com
7
NCP5314
PIN DESCRIPTION
Pin No. 1-3, 30-32 4 5 6 7 8 Pin Symbol VID0-V ID5 PWRLS VFFB SS Pin Name DAC VID Inputs Description VID-compatible logic input used to program the converter output voltage. All high on VID0-V ID4 generates fault. Voltage sensing pin for Power Good lower threshold.
AAAAAAAAAAAAAAAAA A A A A A AAAAAAAAAAAAAAAAA A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A A AAAAAAAAAAAAAAAAAAAAAAAA A A A A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAA A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA A A AAAAAAAAAAAAAAAAA A A A A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA A A A A A AA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA
Power Good Sense Fast Voltage Feedback Soft Start Input of PWM comparator for fast voltage feedback, and also the inputs of Power Good sense and overvoltage protection comparators A capacitor between this pin and ground programs the soft start time. PWRGD DRVON Power Good Output Drive Enable Open collector output goes high when the converter output is in regulation. Logic high enables MOSFET drivers, and logic low turns all MOSFETs off through MOSFET drivers. Pulled to ground through internal 70 k resistor. 9 SGND VDRP Remote Sense Ground Ground connection for DAC and error amplifier. Provides remote sensing of load ground. The offset above DAC voltage is proportional to the sum of inductor current. A resistor from this pin to VFB programs the amount of Adaptive Voltage Positioning. Leave this pin open for no Adaptive Voltage Positioning. Error amplifier inverting input. 10 Output of Current Sense Amplifiers for Adaptive Voltage Positioning Voltage Feedback Error Amp Output 11 VFB 12 13 14 15 16 17 COMP CS4N CS4P Provides loop compensation and is clamped by SS during soft start and fault conditions. It is also the inverting input of PWM comparators. Inverting input to current sense amplifier #4. Current Sense Reference Current Sense Input Non-inverting input to current sense amplifier #4. CS3N CS3P GND Current Sense Reference Current Sense Input Ground Inverting input to current sense amplifier #3, and Phase 3 disable pin. Non-inverting input to current sense amplifier #3, and Phase 3 disable pin. IC power supply return. Connected to IC substrate. PWM outputs to drive MOSFET driver ICs. Power Supply Input for IC. 18-21 22 23 24 25 26 27 28 29 GATE4-GA TE1 VCC Channel Outputs IC Power Supply ROSC ILIM Oscillator Frequency Adjust Total Current Limit Resistor to ground programs the oscillator frequency, as shown in Oscillator Frequency graph Figure NO TAG. Resistor divider between ROSC and ground programs the average current limit. Non-inverting input to current sense amplifier #1. Inverting input to current sense amplifier #1. CS1P Current Sense Input CS1N CS2P Current Sense Reference Current Sense Input Non-inverting input to current sense amplifier #2. Inverting input to current sense amplifier #2. CS2N Current Sense Reference Enable ENABLE A voltage less than the threshold puts the IC in Fault Mode, discharging SS. Connect to system VIDPWRGD signal to control powerup sequencing. Hysteresis is provided to prevent chatter.
http://onsemi.com
8
PWRGD 3.3 V ENABLE UVLO Comparator VCC 10 k
SS
Enable Comparator
DRVON Fault Latch VCC S Q SET Dominant Charge Current Discharge Current RAMP1 CO1 CO1F PWM Comparator
-+
3.3 V Reference
+
-+
+
0.7 V 0.5 V
+
+
Pulse Current Comparator
PWM Latch Phase1 S Q RESET Dominant VCC GATE1
9.0 V 8.0 V
R
+ PWM Comparator
R
200 mV VID5 VID0 VID1 VID2 VID3 VID4 SGND PWRLS
OVP Comparator
PWM Latch Phase2 S Q RESET Dominant
VCC GATE2
-+
DAC VID = 11111x DAC Output 100 mV
SET Dominant
+
PWRGD Comparator
S
Q
RAMP2 CO2 CO2F
+
+ + -
R
R
Figure 2. Block Diagram
-+
20 mV
+ + PWRGD Comparator
VCC PWM Comparator Delay RAMP3 CO3 CO3F 0.6 V PWM Latch Phase3 S Q RESET Dominant GATE3
http://onsemi.com
+CS1P CS1N
0.5
+ -
CO1 x 3.1
+
+ + -
NCP5314
CO1
CS2N
-
CO3 + x 3.1 CO3
+
CS4P
CS3P CS3N
-
CO3F x 10 CO3F +
Oscillator
CO4 x 3.1 CO4 AVP Buffer x.82
CS4P CS4N
+ -
CO4F x 10 CO4F +
-
-+
CO2F x 10 CO2F +
Module OC Comparator
+ Phase 4 Disable Comparator
CO4 CO4F
+ -
R
+
-+
+ -
Phase1 Ramp1 Phase2 Ramp2 Phase3 Ramp3 Phase4 Ramp4
+ 900 mV Pulse- by- Pulse Current Limit
VCC - 0.5 V Current Source Generator
-+
1.0 V
+ -
+ -
ILIM
VDRP VFFB VFB
ROSC
COMP
RESET Dominant
9
R
CO1F x 10 CO1F +
CO2 + x 3.1 CO2
-+ + Error Amplifier PWM Comparator RAMP4 PWM Latch Phase4 S Q
VCC
CS2P
+
+
GATE4
GND
NCP5314 Typical Performance Characteristics
0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 20 40 60 80 100 120 TEMPERATURE (C) VID = 101101 VID = 010100 VID = 010101 VID = 111101 PWRGD DELAY (ms) 230 235
DAC VARIATION FROM NOMINAL (%)
225
220 0 20 40 60 80 100 120 TEMPERATURE (C)
Figure 3. DAC Variation versus Temperature
230 AVERAGE CHANNEL OFFSET (mV) 700 650 600 550 500 450 400 0 20 40 60 80 100 120 0
Figure 4. Power Good Delay versus Temperature
OVP THRESHOLD (mV)
220
210
200
190
20
40
60
80
100
120
TEMPERATURE (C)
TEMPERATURE (C)
Figure 5. OVP Threshold above VID versus Temperature
1000 SWITCHING FREQUENCY (kHz) 4 PHASE FREQUENCY (kHz) 680 675 670
Figure 6. Channel Startup Offset versus Temperature
895 890 885 4 PHASE 665 660 655 650 880 875 870 865 0 20 40 60 80 100 120 TEMPERATURE (C) 3 PHASE FREQUENCY (kHz)
3 Phase Mode
4 Phase Mode
3 PHASE
100 10 k 100 k ROSC (OHMS) 1000 k
Figure 7. Oscillator Frequency versus Total ROSC Value
Figure 8. Switching Frequency versus Temperature (ROSC = 32.4 kW)
http://onsemi.com
10
NCP5314 Typical Performance Characteristics
1.025 2.60
CS TO VDRP GAIN (V/V) 0 20 40 60 80 100 120
1.020 ROSC VOLTAGE (V)
2.55
1.015
2.50
1.010
1.005 1.000 TEMPERATURE (C)
2.45
2.40 0 20 40 60 80 100 120 TEMPERATURE (C)
Figure 9. VROSC versus Temperature
45 CURRENT SENSE AMP GAIN (V/V) SS CHARGE CURRENT (mA) 44 43 42 41 40 39 38 0 20 40 60 80 100 120 TEMPERATURE (C) 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 0
Figure 10. Current Sense to VDRP Gain versus Temperature
20
40
60
80
100
120
TEMPERATURE (C)
Figure 11. Soft Start Charge Current versus Temperature
CURRENT SENSE TO ILIM GAIN (V/V) 3.35 3.30 3.25 3.20 3.15 3.10 3.05 3.00 0 20 40 60 80 100 120 TEMPERATURE (C) IPLIM THRESHOLD VOLTAGE (mV) 110 105 100 95 90 85 80 0
Figure 12. Current Sense Amplifier to PWM Gain versus Temperature
20
40
60
80
100
120
TEMPERATURE (C)
Figure 13. CS Amp to ILIM Gain versus Temperature
Figure 14. Pulse-by-Pulse Current Limit Threshold versus Temperature
http://onsemi.com
11
NCP5314 Typical Performance Characteristics
30 29 ICC CURRENT (mA) 28 27 26 25 24 23 22 0 20 40 60 80 100 120 TEMPERATURE (C)
Figure 15. VCC Operating Current versus Temperature
VCC Enable VREF Fault UVLO Fault Fault Reset Fault Latch Fault DRVON
SS COMP
VOUT
IOUT PWRGD Enabled Enabled Normal Operation Enabled Overvoltage Start Up Start Up Start Up UVLO Overcurrent Latch-Of f Power-Of f to Reset OC Fault Pulse-by-Pulse Current Limit Power-Of f to Reset OC Fault Power-On Power-On Power-On Power-Of f
Figure 16. Operating Waveforms
http://onsemi.com
12
NCP5314
THEORY OF OPERATION
Overview Fixed Frequency Multi-Phase Control
The NCP5314 DC/DC controller from ON Semiconductor was developed using the Enhanced V2 topology. Enhanced V2 combines the original V2 topology with peak current-mode control for fast transient response and current sensing capability. The addition of an internal PWM ramp and implementation of fast-feedback directly from Vcore has improved transient response and simplified design. This controller can be adjusted to operate as a two-, three- or four-phase controller. Differential current sensing provides improved current sharing and easier layout. The NCP5314 includes Power Good (PWRGD), providing a highly integrated solution to simplify design, minimize circuit board area, and reduce overall system cost. Two advantages of a multi-phase converter over a single-phase converter are current sharing and increased effective output frequency. Current sharing allows the designer to use less inductance in each phase than would be required in a single- phase converter. The smaller inductor will produce larger ripple currents but the total per- phase power dissipation is reduced because the RMS current is lower. Transient response is improved because the control loop will measure and adjust the current faster with a smaller output inductor. Increased effective output frequency is desirable because the off-time and the ripple voltage of the multi-phase converter will be less than that of a single-phase converter.
x = 1, 2, 3 or 4 SWNODE Lx RLx CSxP
In a multi-phase converter, multiple converters are connected in parallel and are switched on at different times. This reduces output current from the individual converters and increases the ripple frequency. Because several converters are connected in parallel, output current can ramp up or down faster than a single converter (with the same value output inductor) and heat is spread among multiple components. The NCP5314 controller uses four- phase, fixed- frequency, Enhanced V2 architecture to measure and control currents in individual phases. In four phase mode, each phase is delayed 90 from the previous phase (120 in three phase mode). Normally, GATEx transitions to a high voltage at the beginning of each oscillator cycle. Inductor current ramps up until the combination of the amplified current sense signal, the internal ramp and the output voltage ripple trip the PWM comparator and bring GATEx low. Once GATEx goes low, it will remain low until the beginning of the next oscillator cycle. While GATEx is high, the Enhanced V2 loop will respond to line and load variations. On the other hand, once GATEx is low, the loop cannot respond until the beginning of the next PWM cycle. Therefore, constant frequency Enhanced V2 will typically respond to disturbances within the off- time of the converter.
RSx CSxN VOUT (VCORE)
+ CSA VFFB
COx
Internal Ramp + Channel Start-Up Offset + PWM COMP "Fast-Feedback" Connection VFB DAC COMP Out
+
To F/F Reset
+
E.A. +
Figure 17. Enhanced V2 Control Employing Resistive Current Sensing and Internal Ramp
The Enhanced V2 architecture measures and adjusts the output current in each phase. An additional differential input (CSxN and CSxP) for inductor current information has been added to the V2 loop for each phase as shown in Figure 17. The triangular inductor current is measured differentially across RS, amplified by CSA and summed with the channel startup offset, the internal ramp and the output voltage at the non-inverting input of the PWM comparator. The purpose of the internal ramp is to compensate for propagation delays in the NCP5314. This provides greater design flexibility by allowing smaller external ramps, lower minimum pulse
widths, higher frequency operation and PWM duty cycles above 50% without external slope compensation. As the sum of the inductor current and the internal ramp increase, the voltage on the positive pin of the PWM comparator rises and terminates the PWM cycle. If the inductor starts a cycle with higher current, the PWM cycle will terminate earlier providing negative feedback. The NCP5314 provides a differential current sense input (CSxN and CSxP) for each phase. Current sharing is accomplished by referencing all phases to the same COMP pin, so that a phase with a larger
http://onsemi.com
13
NCP5314
current signal will turn off earlier than a phase with a smaller current signal. Enhanced V2 responds to disturbances in VCORE by employing both "slow" and "fast" voltage regulation. The internal error amplifier performs the slow regulation. Depending on the gain and frequency compensation set by the amplifier's external components, the error amplifier will typically begin to ramp its output to react to changes in the output voltage in one or two PWM cycles. Fast voltage feedback is implemented by a direct connection from Vcore to the non-inverting pin of the PWM comparator via the summation with the inductor current, internal ramp and offset. A rapid increase in output current will produce a negative offset at Vcore and at the output of the summer. This will cause the PWM duty cycle to increase almost instantly. Fast feedback will typically adjust the PWM duty cycle in one PWM cycle. As shown in Figure 17, an internal ramp (nominally 100 mV at a 50% duty cycle) is added to the inductor current ramp at the positive terminal of the PWM comparator. This additional ramp compensates for propagation time delays from the current sense amplifier (CSA), the PWM comparator and the MOSFET gate drivers. As a result, the minimum ON time of the controller is reduced and lower duty-cycles may be achieved at higher frequencies. Also, the additional ramp reduces the reliance on the inductor current ramp and allows greater flexibility when choosing the output inductor and the RCSxCCSx time constant of the feedback components from VCORE to the CSx pin. Including both current and voltage information in the feedback signal allows the open loop output impedance of the power stage to be controlled. When the average output current is zero, the COMP pin will be:
VCOMP + VOUT @ 0 A ) Channel_Startup_Offset ) Int_Ramp ) GCSA @ Ext_Ramp 2
SWNODE
VFB (VOUT)
Internal Ramp CSA Out w/ Exaggerated Delays COMP-Of fset CSA Out + Ramp + CSREF
T1
T2
Figure 18. Open Loop Operation
If the COMP pin is held steady and the inductor current changes, there must also be a change in the output voltage or, in a closed loop configuration when the output current changes, the COMP pin must move to keep the same output voltage. The required change in the output voltage or COMP pin depends on the scaling of the current feedback signal and is calculated as:
DV + RS @ GCSA @ DIOUT
The single-phase power stage output impedance is:
Single Stage Impedance + DVOUT DIOUT + RS @ GCSA
Int_Ramp is the "partial" internal ramp value at the corresponding duty cycle, Ext_Ramp is the peak-to-peak external steady-state ramp at 0 A, GCSA is the current sense amplifier gain (nominally 3.0 V/V) and the channel startup offset is typically 0.60 V. The magnitude of the Ext_Ramp can be calculated from:
Ext_Ramp + D @ (VIN * VOUT) (RCSx @ CCSx @ fSW)
The total output impedance will be the single stage impedance divided by the number of phases in operation. The output impedance of the power stage determines how the converter will respond during the first few microseconds of a transient before the feedback loop has repositioned the COMP pin. The peak output current can be calculated from:
IOUT,PEAK + (VCOMP * VOUT * Offset) (RS @ GCSA)
For example, if VOUT at 0 A is set to 1.480 V with AVP and the input voltage is 12.0 V, the duty cycle (D) will be 1.48/12.0 or 12.3%. Int_Ramp will be 100 mV/50% 12.3% = 25 mV. Realistic values for RCSx, CCSx and fSW are 10 k, 0.015 F and 650 kHz. Using these and the previously mentioned formula, Ext_Ramp will be 15.0 mV.
VCOMP + 1.48 V ) 0.62 V ) 25 mV ) 2.65 V V @ 15.0 mV 2 + 2.145 Vdc
Figure 18 shows the step response of the COMP pin at a fixed level. Before T1, the converter is in normal steady- state operation. The inductor current provides a portion of the PWM ramp through the current sense amplifier. The PWM cycle ends when the sum of the current ramp, the "partial" internal ramp voltage signal and offset exceed the level of the COMP pin. At T1, the output current increases and the output voltage sags. The next PWM cycle begins and the cycle continues longer than previously while the current signal increases enough to make up for the lower voltage at the VFB pin and the cycle ends at T2. After T2, the output voltage remains lower than at light load and the average current signal level (CSx output) is raised so that the sum of the current and voltage signal is the same as with the original load. In a closed
http://onsemi.com
14
NCP5314
loop system, the COMP pin would move higher to restore the output voltage to the original level.
Inductive Current Sensing
For lossless sensing, current can be measured across the inductor as shown in Figure 19. In the diagram, L is the output inductance and RL is the inherent inductor resistance.
SWNODE Lx RCSx x = 1, 2, 3 or 4 CSxP CCSx CSxN RLx VFFB VOUT (VCORE)
To compensate the current sense signal, the values of RCSx and CCSx are chosen so that L/RL = RCSx CCSx. If this criteria is met, the current sense signal should be the same shape as the inductor current and the voltage signal at CSx will represent the instantaneous value of inductor current. Also, the circuit can be analyzed as if a sense resistor of value RL was used.
+ CSA -
COx
Internal Ramp + "Fast-Feedback" Connection VFB DAC Out COMP
+
+
Channel Start-Up Offset
+ PWM COMP
To F/F Reset
E.A. +
Figure 19. Enhanced V2 Control Employing Lossless Inductive Current Sensing and Internal Ramp
When choosing or designing inductors for use with inductive sensing, tolerances and temperature effects should be considered. Cores with a low permeability material or a large gap will usually have minimal inductance change with temperature and load. Copper magnet wire has a temperature coefficient of 0.39% per C. The increase in winding resistance at higher temperatures should be considered when setting the OCSET threshold. If a more accurate current sense is required than inductive sensing can provide, current can be sensed through a resistor as shown in Figure 17.
Current Sharing Accuracy
phases will be the CSA input mismatch divided by the current sense resistance. If all current sense components are of equal resistance, a 3.0 mV mismatch with a 2.0 m sense resistance will produce a 1.5 A difference in current between phases.
External Ramp Size and Current Sensing
Printed circuit board (PCB) traces that carry inductor current can be used as part of the current sense resistance depending on where the current sense signal is picked off. For accurate current sharing, the current sense inputs should sense the current at relatively the same points for each phase. In some cases, especially with inductive sensing, resistance of the PCB can be useful for increasing the current sense resistance. The total current sense resistance used for calculations must include any PCB trace resistance that carries inductor current between the CSxP input and the CSxN input. Current Sense Amplifier (CSA) input mismatch and the value of the current sense component will determine the accuracy of the current sharing between phases. The worst case CSA input mismatch is 10 mV and will typically be within 4.0 mV. The difference in peak currents between
The internal ramp allows flexibility in setting the current sense time constant. Typically, the current sense RCSx CCSx time constant should be equal to or slightly slower than the inductor's time constant. If RC is chosen to be smaller (faster) than L/RL, the AC or transient portion of the current sensing signal will be scaled larger than the DC portion. This will provide a larger steady-state ramp, but circuit performance will be affected and must be evaluated carefully. The current signal will overshoot during transients and settle at the rate determined by RCSx CCSx. It will eventually settle to the correct DC level, but the error will decay with the time constant of RCSx CCSx. If this error is excessive, it will affect transient response, adaptive positioning and current limit. During a positive current transient, the COMP pin will be required to undershoot in response to the current signal in order to maintain the output voltage. Similarly, the VDRP signal will overshoot which will produce too much transient droop in the output voltage. The single-phase pulse-by-pulse overcurrent protection will trip earlier than it would if compensated correctly and hiccup-mode current limit will have a lower threshold for fast rising step loads than for slowly rising output currents.
http://onsemi.com
15
NCP5314
excursions are cut in half. In the slow AVP waveform, the output voltage is not repositioned quickly enough after current is stepped up and the upper limit is exceeded. The controller can be configured to adjust the output voltage based on the output current of the converter. (Refer to the application diagram in Figure 1). The no- load positioning is now set internally to VID - 20 mV, reducing the potential error due to resistor and bias current mismatches. In order to realize the AVP function, a resistor divider network is connected between VFB, VDRP and VOUT. During no-load conditions, the VDRP pin is at the same voltage as the VFB pin. As the output current increases, the VDRP pin voltage increases proportionally. This drives the VFB voltage higher, causing VOUT to "droop" according to a loadline set by the resistor divider network. The response during the first few microseconds of a load transient is controlled primarily by power stage output impedance, and by the ESR and ESL of the output filter. The transition between fast and slow positioning is controlled by the total ramp size and the error amp compensation. If the ramp size is too large or the error amp too slow, there will be a long transition to the final voltage after a transient. This will be most apparent with low capacitance output filters.
Figure 20. Inductive Sensing Waveform During a Load Step with Fast RC Time Constant (50 s/div)
The waveforms in Figure 20 show a simulation of the current sense signal and the actual inductor current during a positive step in load current with values of L = 500 nH, RL = 1.6 m, RCSx = 20 k and CCSx = .01 F. In this case, ideal current signal compensation would require RCSx to be 31 k. Due to the faster than ideal RC time constant, there is an overshoot of 50% and the overshoot decays with a 200 s time constant. With this compensation, the ILIM pin threshold must be set more than 50% above the full load current to avoid triggering current limit during a large output load step.
Transient Response and Adaptive Voltage Positioning
Normal Fast Adaptive Positioning Slow Adaptive Positioning Limits
For applications with fast transient currents, the output filter is frequently sized larger than ripple currents require in order to reduce voltage excursions during load transients. Adaptive voltage positioning can reduce peak-peak output voltage deviations during load transients and allow for a smaller output filter. The output voltage can be set higher than nominal at light loads to reduce output voltage sag when the load current is applied. Similarly, the output voltage can be set lower than nominal during heavy loads to reduce overshoot when the load current is removed. For low current applications, a droop resistor can provide fast, accurate adaptive positioning. However, at high currents, the loss in a droop resistor becomes excessive. For example, a 50 A converter with a 1 m resistor would provide a 50 mV change in output voltage between no load and full load and would dissipate 2.5 W. Lossless adaptive voltage positioning (AVP) is an alternative to using a droop resistor, but it must respond to changes in load current. Figure 21 shows how AVP works. The waveform labeled "normal" shows a converter without AVP. On the left, the output voltage sags when the output current is stepped up and later overshoots when current is stepped back down. With fast (ideal) AVP, the peak-to-peak
Figure 21. Adaptive Voltage Positioning Overvoltage Protection
Overvoltage protection (OVP) is provided as a result of the normal operation of the Enhanced V2 control topology with synchronous rectifiers. The control loop responds to an overvoltage condition within 40 ns, causing the GATEx output to shut off. The (external) MOSFET driver should react normally to turn off the top MOSFET and turn on the bottom MOSFET. This results in a "crowbar" action to clamp the output voltage and prevent damage to the load. The regulator will remain in this state until the fault latch is reset by cycling power at the VCC pin.
Power Good
According to the latest specifications, the Power Good (PWRGD) signal must be asserted when the output voltage is within a window defined by the VID code, as shown in Figure 22. The PWRLS pin is provided to allow the PWRGD comparators to accurately sense the output voltage. The effect of the PWRGD lower threshold can be modified using
http://onsemi.com
16
NCP5314
a resistor divider from the output to PWRLS to ground, as shown in Figure 23. Since the internally-set thresholds for PWRLS are VID/2 for the lower threshold and VID + 80 mV for the upper threshold, a simple equation can be provided to assist the designer in selecting a resistor divider to provide the desired PWRGD performance.
V R ) R2 VLOWER + VID @ 1 2 R1 VUPPER + VVID ) 80 mV
ensuring proper start-up behavior. All GATE outputs are held low until the COMP voltage reaches 0.6 V. Once this threshold is reached, the GATE outputs are released to operate normally.
Current Limit
The logic circuitry inside the chip sets PWRGD low only after a delay period has been passed. A "power bad" event does not cause PWRGD to go low unless it is sustained through the delay time of 250 s. If the anomaly disappears before the end of the delay, the PWRGD output will never be set low. In order to use the PWRGD pin as specified, the user is advised to connect external resistors as necessary to limit the current into this pin to 4 mA or less.
PWRGD PWRGD lo w PWRGD high PWRGD low
Two levels of over-current protection are provided. First, if the voltage between the Current Sense pins (CSxN and CSxP) exceeds the fixed threshold (Single Pulse Current Limit), the PWM comparator is turned off. This provides fast peak current protection for individual phases. Second, the individual phase currents are summed and externally low-pass filtered to compare an averaged current signal to a user adjustable voltage on the ILIM pin. If the ILIM voltage is exceeded, the fault latch trips and the converter is latched off. VCC must be recycled to reset the latch.
Fault Protection Logic
The NCP5314 includes fault protection circuitry to prevent harmful modes of operation from occurring. The fault logic is described in Table 1.
Gate Outputs
LOW
-2.6% +2.6 %
VLOWER
Figure 22. PWRGD Assertion Window
VOUT R1 PWRLS R2
Figure 23. Adjusting the PWRGD Threshold Undervoltage Lockout
The NCP5314 includes an undervoltage lockout circuit. This circuit keeps the IC's output drivers low until VCC applied to the IC reaches 9 V. The GATE outputs are disabled when VCC drops below 8 V.
Soft Start
At initial power-up, both SS and COMP voltages are zero. The total SS capacitance will begin to charge with a current of 40 A. The error amplifier directly charges the COMP capacitance. An internal clamp ensures that the COMP pin voltage will always be less than the voltage at the SS pin,
EEE EEE CCC CCC CCC
-5.0% +5.0 %
EEE EEE CCC CCC CCC
HIGH
The NCP5314 is designed to operate with external gate drivers. Accordingly, the gate outputs are capable of driving a 100 pF load with typical rise and fall times of 5 ns.
Digital to Analog Converter (DAC)
VOUT
VID + 80 mV
The output voltage of the NCP5314 is set by means of a 6-bit, 0.5% DAC. The VID pins must be pulled high externally. A 1.5 k pullup to a maximum of 3.3 V is recommended to meet Intel specifications. To ensure valid logic signals, the designer should ensure at least 800 mV will be present at the IC for a logic high. The output of the DAC is described in the Electrical Characteristics section of the data sheet. These outputs are consistent with VR10.x and processor specifications. The DAC output is 20 mV below the VID code specification. The latest VRM and processor specifications require a power supply to turn its output off in the event of a 11111X VID code. When the DAC sees such a code, the GATE pins stop switching and go low. This condition is described in Table 1.
Adjusting the Number of Phases
The NCP5314 was designed with a selectable-phase architecture. Designers may choose any number of phases up to four. The phase delay is automatically adjusted to match the number of phases that will be used. This feature allows the designer to select the number of phases required for a particular application. Four-phase operation is standard. All phases switch with a 90 degree delay between pulses. No special connections are required. Three-phase operation is achieved by disabling phase 4. Tie together CS4N and CS4P, and then pull both pins to VCC. The remaining phases will continue to switch, but now there
http://onsemi.com
17
NCP5314
will be a 120 degree delay between pulses. The phase firing order will become 1-2-3. Two- and single-phase operation may be realized as well. First, the designer must choose the proper phases. Two phase operation must use phase 2 and 4 by tying CS1N, CS1P, CS3N and CS3P to ground. This will then use phase 2 and
Table 1. Description of Fault Logic
Results Faults Overvoltage Lockout Enable Low Module Overcurrent Limit DAC Code = 11111x VREF Undervoltage Lockout PWRLS Out of Range Stop Switching Yes Yes Yes Yes Yes No PWRGD Level Low Depends on output voltage level Depends on output voltage level Depends on output voltage level Depends on output voltage level Low Driver Enable High Low Low Low Low High SS Characteristics -0.3 mA -0.3 mA -0.3 mA -0.3 mA -0.3 mA Not Affected Reset Method Power On Not Affected Power On Valid VID Power On Not Affected
4 as the gate drivers. The other gate drives may switch, so leave them unconnected. Single phase is best accomplished by using only Phase 2 as the switch controller. Connect CS2P and CS2N pins to the current sense capacitor and the gate drive to the driver IC. Tie all other CSxx pins together and connect them to ground.
APPLICATIONS INFORMATION
1. Setting Converter Operating Frequency
The total resistance from ROSC to ground sets the operating frequency for each phase of the converter. The frequency can be set for either the three phase or four phase mode by using Figure 7, "Oscillator Frequency versus Total ROSC Value." After choosing the desired operating frequency and the number of phases, use the figure to determine the necessary resistance. If two phase operation is desired, use the value given for four phase operation. The voltage from ROSC is closely regulated at 1 V. This voltage can be used as the reference for the overcurrent limit set point on the ILIM pin. Design a voltage divider with the appropriate division ratio to give the desired ILIM voltage and total resistance to set the operating frequency. Since loading by the ILIM pin is very small, the frequency selection will not be affected.
2. Output Capacitor Selection
NOUT,MIN + ESR per capacitor @
DIO,MAX DVO,MAX
(1)
In reality, both the ESR and ESL of the bulk capacitors determine the voltage change during a load transient according to:
DVO,MAX + (DIO,MAX Dt) @ ESL ) DIO,MAX @ ESR (2)
The output capacitors filter the current from the output inductor and provide a low impedance for transient load current changes. Typically, microprocessor applications require both bulk (electrolytic, tantalum) and low impedance, high frequency (ceramic) types of capacitors. The bulk capacitors provide "hold up" during transient loading. The low impedance capacitors reduce steady-state ripple and bypass the bulk capacitance when the output current changes very quickly. The microprocessor manufacturers usually specify a minimum number of ceramic capacitors. The designer must determine the number of bulk capacitors. Choose the number of bulk output capacitors to meet the peak transient requirements. The formula below can be used to provide a starting point for the minimum number of bulk capacitors (NOUT,MIN):
Unfortunately, capacitor manufacturers do not specify the ESL of their components and the inductance added by the PCB traces is highly dependent on the layout and routing. Therefore, it is necessary to start a design with slightly more than the minimum number of bulk capacitors and perform transient testing or careful modeling/simulation to determine the final number of bulk capacitors. The latest Intel processor specifications discuss "dynamic VID" (DVID), in which the VID codes are stepped up or down to a new desired output voltage. Due to the timing requirements at which the output must be in regulation, the output capacitor selection becomes more complicated. The ideal output capacitor selection has low ESR and low capacitance. Too much output capacitance will make it difficult to meet DVID timing specifications; too much ESR will complicate the transient solution. The Sanyo 4SP560M and Panasonic EEU-FL provide a good balance of capacitance vs. ESR.
3. Output Inductor Selection
The output inductor may be the most critical component in the converter because it will directly effect the choice of other components and dictate both the steady-state and transient performance of the converter. When selecting an inductor, the designer must consider factors such as DC current, peak current, output voltage ripple, core material,
http://onsemi.com
18
NCP5314
magnetic saturation, temperature, physical size and cost (usually the primary concern). In general, the output inductance value should be electrically and physically as small as possible to provide the best transient response at minimum cost. If a large inductance value is used, the converter will not respond quickly to rapid changes in the load current. On the other hand, too low an inductance value will result in very large ripple currents in the power components (MOSFETs, capacitors, etc.) resulting in increased dissipation and lower converter efficiency. Increased ripple currents force the designer to use higher rated MOSFETs, oversize the thermal solution, and use more, higher rated input and output capacitors, adversely affecting converter cost. One method of calculating an output inductor value is to size the inductor to produce a specified maximum ripple current in the inductor. Lower ripple currents will result in less core and MOSFET losses and higher converter efficiency. Equation 3 may be used to calculate the minimum inductor value to produce a given maximum ripple current () per phase. The inductor value calculated by this equation is a minimum because values less than this will produce more ripple current than desired. Conversely, higher inductor values will result in less than the selected maximum ripple current.
(VIN * VOUT) @ VOUT LoMIN + (a @ IO,MAX @ VIN @ fSW)
(3)
much more quickly than it can be decreased. Thus, it may be more difficult for the converter to stay within the regulation limits when the load is removed than when it is applied and excessive overshoot may result. The output voltage ripple can be calculated using the output inductor value derived in this Section (LoMIN), the number of output capacitors (NOUT,MIN) and the per capacitor ESR determined in the previous Section:
VOUT,P- P + (ESR per cap NOUT,MIN) @ (VIN * #Phases @ VOUT) @ D (LoMIN @ fSW)
(4)
This formula assumes steady-state conditions with no more than one phase on at any time. The second term in Equation 4 is the total ripple current seen by the output capacitors. The total output ripple current is the "time summation" of the four individual phase currents that are 90 degrees out-of-phase. As the inductor current in one phase ramps upward, current in the other phase ramps downward and provides a canceling of currents during part of the switching cycle. Therefore, the total output ripple current and voltage are reduced in a multi-phase converter.
4. Input Capacitor Selection
is the ripple current as a percentage of the maximum output current per phase ( = 0.15 for 15%, = 0.25 for 25%, etc.). If the minimum inductor value is used, the inductor current will swing % about its value at the center. Therefore, for a four-phase converter, the inductor must be designed or selected such that it will not saturate with a peak current of (1 + ) IO,MAX/4. The maximum inductor value is limited by the transient response of the converter. If the converter is to have a fast transient response, the inductor should be made as small as possible. If the inductor is too large its current will change too slowly, the output voltage will droop excessively, more bulk capacitors will be required and the converter cost will be increased. For a given inductor value, it is useful to determine the times required to increase or decrease the current. For increasing current:
DtINC + Lo @ DIO (VIN * VOUT)
(3.1)
The choice and number of input capacitors is primarily determined by their voltage and ripple current ratings. The designer must choose capacitors that will support the worst case input voltage with adequate margin. To calculate the number of input capacitors, one must first determine the total RMS input ripple current. To this end, begin by calculating the average input current to the converter:
IIN,AVG + IO,MAX @ D h
(5)
where: D is the duty cycle of the converter, D = VOUT/VIN; is the specified minimum efficiency; IO,MAX is the maximum converter output current. The input capacitors will discharge when the control FET is ON and charge when the control FET is OFF as shown in Figure 24. The following equations will determine the maximum and minimum currents delivered by the input capacitors:
IC,MAX + ILo,MAX h * IIN,AVG IC,MIN + ILo,MIN h * IIN,AVG
(6) (7)
ILo,MAX is the maximum output inductor current:
ILo,MAX + IO,MAX f ) DILo 2
(8)
For decreasing current:
DtDEC + Lo @ DIO (VOUT)
(3.2)
where is the number of phases in operation. ILo,MIN is the minimum output inductor current:
ILo,MIN + IO,MAX f * DILo 2
(9)
For typical processor applications with output voltages less than half the input voltage, the current will be increased
http://onsemi.com
19
NCP5314
IC,MAX IC,MIN 0A tON FET Off, Caps Charging -I IN,AVG FET On, Caps Discharging T/4 IC,IN = IC,MAX - IC,MIN
Figure 24. Input Capacitor Current for a Four-Phase Converter
ILo is the peak-to-peak ripple current in the output inductor of value Lo:
DILo + (VIN * VOUT) @ D (Lo @ fSW)
(10)
inrush currents reduce the expected life of the input capacitors. The inductor's limiting effect on the input current slew rate becomes increasingly beneficial during load transients. The worst case input current slew rate will occur during the first few PWM cycles immediately after a step-load change is applied as shown in Figure 25. When the load is applied, the output voltage is pulled down very quickly. Current through the output inductors will not change instantaneously, so the initial transient load current must be conducted by the output capacitors. The output voltage will step downward depending on the magnitude of the output current (IO,MAX), the per capacitor ESR of the output capacitors (ESROUT) and the number of the output capacitors (NOUT) as shown in Figure 25. Assuming the load current is shared equally between all phases, the output voltage at full transient load will be:
VOUT,FULL- LOAD +
(14)
For the four-phase converter, the input capacitor(s) RMS current is then:
ICIN,RMS + [4D @ (IC,MIN2 ) IC,MIN @ DIC,IN
(11)
VOUT,NO- LOAD * (IO,MAX f) @ ESROUT NOUT
) DIC,IN2 3) ) IIN,AVG2 @ (1 * 4D)]1 2
Select the number of input capacitors (NIN) to provide the RMS input current (ICIN,RMS) based on the RMS ripple current rating per capacitor (IRMS,RATED):
NIN + ICIN,RMS IRMS,RATED
(12)
When the control MOSFET (Q1 in Figure 25) turns ON, the input voltage will be applied to the opposite terminal of the output inductor (the SWNODE). At that instant, the voltage across the output inductor can be calculated as:
DVLo + VIN * VOUT,FULL- LOAD + VIN * VOUT,NO- LOAD ) (IO,MAX f) @ ESROUT NOUT
(15)
For a four-phase converter with perfect efficiency ( = 1), the worst case input ripple-current will occur when the converter is operating at a 12.5% duty cycle. At this operating point, the parallel combination of input capacitors must support an RMS ripple current equal to 12.5% of the converter's DC output current. At other duty cycles, the ripple-current will be less. For example, at a duty cycle of either 6% or 19%, the four-phase input ripple-current will be approximately 10% of the converter's DC output current. In general, capacitor manufacturers require derating to the specified ripple-current based on the ambient temperature. More capacitors will be required because of the current derating. The designer should know the ESR of the input capacitors. The input capacitor power loss can be calculated from:
PCIN + ICIN,RMS2 @ ESR_per_capacitor NIN (13)
The differential voltage across the output inductor will cause its current to increase linearly with time. The slew rate of this current can be calculated from:
dILo dt + DVLo Lo
(16)
Current changes slowly in the input inductor so the input capacitors must initially deliver the vast majority of the input current. The amount of voltage drop across the input capacitors (VCi) is determined by the number of input capacitors (NIN), their per capacitor ESR (ESRIN) and the current in the output inductor according to:
DVCi + ESRIN NIN @ dILo dt @ tON + ESRIN NIN @ dILo dt @ D fSW
(17)
Low ESR capacitors are recommended to minimize losses and reduce capacitor heating. The life of an electrolytic capacitor is reduced 50% for every 10C rise in the capacitor's temperature.
5. Input Inductor Selection
Before the load is applied, the voltage across the input inductor (VLi) is very small and the input capacitors charge to the input voltage VIN. After the load is applied, the voltage drop across the input capacitors, VCi, appears across the input inductor as well. Knowing this, the minimum value of the input inductor can be calculated from:
LiMIN + VLi + DVCi dIIN dtMAX dIIN dtMAX
(18)
The use of an inductor between the input capacitors and the power source will accomplish two objectives. First, it will isolate the voltage source and the system from the noise generated in the switching supply. Second, it will limit the inrush current into the input capacitors at power up. Large
dIIN/dtMAX is the maximum allowable input current slew rate.
http://onsemi.com
20
NCP5314
The input inductance value calculated from Equation 18 is relatively conservative. It assumes the supply voltage is very "stiff" and does not account for any parasitic elements that will limit dI/dt such as stray inductance. Also, the ESR values of the capacitors specified by the manufacturer's data sheets are worst case high limits. In reality, input voltage "sag," lower capacitor ESRs and stray inductance will help reduce the slew rate of the input current. As with the output inductor, the input inductor must support the maximum current without saturating the inductor. Also, for an inexpensive iron powder core, such as the -26 or -52 from Micrometals, the inductance "swing" with DC bias must be taken into account and inductance will decrease as the DC input current increases. At the maximum input current, the inductance must not decrease below the minimum value or the dI/dt will be higher than expected.
MAX dI/dt occurs in first few PWM cycles. ILi Li TBD NCi x Ci
+ VCi
6. MOSFET & Heatsink Selection
Power dissipation, package size and thermal requirements drive MOSFET selection. To adequately size the heat sink, the design must first predict the MOSFET power dissipation. Once the dissipation is known, the heat sink thermal impedance can be calculated to prevent the specified maximum case or junction temperatures from being exceeded at the highest ambient temperature. Power dissipation has two primary contributors: conduction losses and switching losses. The control or upper MOSFET will display both switching and conduction losses. The synchronous or lower MOSFET will exhibit only conduction losses because it switches into nearly zero voltage. However, the body diode in the synchronous MOSFET will suffer diode losses during the non-overlap time of the gate drivers.
VOUT
Vi(t = 0) = 12 V
Q1
SWNODE
ILo Lo
+
Vo(t = 0) = 1.745 V
NCo x Co
+ -
Vi 12 V ESRCi/NCi
Q2
14 u(t)
ESRCo/NCo
Figure 25. Calculating the Input Inductance PD,CONTROL + (IRMS,CNTL2 @ RDS(on))
ID (19)
) (ILo,MAX @ Qswitch Ig @ VIN @ fSW) ) (Qoss 2 @ VIN @ fSW) ) (VIN @ QRR @ fSW)
VGATE
VGS_TH
QGS1
QGS2
QGD
VDRAIN
Figure 26. MOSFET Switching Characteristics
For the upper or control MOSFET, the power dissipation can be approximated from:
The first term represents the conduction or IR losses when the MOSFET is ON while the second term represents the switching losses. The third term is the loss associated with the control and synchronous MOSFET output charge when the control MOSFET turns ON. The output losses are caused by both the control and synchronous MOSFET but are dissipated only in the control FET. The fourth term is the loss due to the reverse recovery time of the body diode in the synchronous MOSFET. The first two terms are usually adequate to predict the majority of the losses. IRMS,CNTL is the RMS value of the trapezoidal current in the control MOSFET:
http://onsemi.com
21
NCP5314
IRMS,CNTL + D
(20)
@ [(ILo,MAX2 ) ILo,MAX @ ILo,MIN ) ILo,MIN2) 3]1 2
maintain a specified junction temperature at the worst case ambient operating temperature.
qT t (TJ * TA) PD
(28)
ILo,MAX is the maximum output inductor current:
ILo,MAX + IO,MAX f ) DILo 2
(21)
ILo,MIN is the minimum output inductor current:
ILo,MIN + IO,MAX f * DILo 2
(22)
IO,MAX is the maximum converter output current. D is the duty cycle of the converter:
D + VOUT VIN
(23)
ILo is the peak-to-peak ripple current in the output inductor of value Lo:
DILo + (VIN * VOUT) @ D (Lo @ fSW)
(24)
where: T is the total thermal impedance (JC + SA); JC is the junction-to-case thermal impedance of the MOSFET; SA is the sink-to-ambient thermal impedance of the heatsink assuming direct mounting of the MOSFET (no thermal "pad" is used); TJ is the specified maximum allowed junction temperature; TA is the worst case ambient operating temperature. For TO-220 and TO-263 packages, standard FR-4 copper clad circuit boards will have approximate thermal resistances (SA) as shown below:
Pad Size (in2/mm2) 0.50/323 0.75/484 1.00/645 1.50/968 Single-Sided 1 oz. Copper 60-65 C/W 55-60 C/W 50-55 C/W 45-50 C/W
RDS(on) is the ON resistance of the MOSFET at the applied gate drive voltage. Qswitch is the post gate threshold portion of the gate-to-source charge plus the gate-to-drain charge. This may be specified in the data sheet or approximated from the gate-char ge curve as shown in the Figure 26.
Qswitch + Qgs2 ) Qgd
(25)
Ig is the output current from the gate driver IC. VIN is the input voltage to the converter. fsw is the switching frequency of the converter. QG is the MOSFET total gate charge to obtain RDS(on); commonly specified in the data sheet. Vg is the gate drive voltage. QRR is the reverse recovery charge of the lower MOSFET. Qoss is the MOSFET output charge specified in the data sheet. For the lower or synchronous MOSFET, the power dissipation can be approximated from:
PD,SYNCH + (IRMS,SYNCH2 @ RDS(on)) ) (Vfdiode @ IO,MAX 2 @ t_nonoverlap @ fSW)
(26)
As with any power design, proper laboratory testing should be performed to insure the design will dissipate the required power under worst case operating conditions. Variables considered during testing should include maximum ambient temperature, minimum airflow, maximum input voltage, maximum loading and component variations (i.e., worst case MOSFET RDS(on)). Also, the inductors and capacitors share the MOSFET's heatsinks and will add heat and raise the temperature of the circuit board and MOSFET. For any new design, it is advisable to have as much heatsink area as possible. All too often, new designs are found to be too hot and require re-design to add heatsinking.
7. Adaptive Voltage Positioning
where: Vfdiode is the forward voltage of the MOSFET's intrinsic diode at the converter output current. t_nonoverlap is the non-overlap time between the upper and lower gate drivers to prevent cross conduction. This time is usually specified in the data sheet for the control IC. The first term represents the conduction or IR losses when the MOSFET is ON and the second term represents the diode losses that occur during the gate non-overlap time. All terms were defined in the previous discussion for the control MOSFET with the exception of:
(27) IRMS,SYNCH + 1 * D @ [(ILo,MAX2 ) ILo,MAX @ ILo,MIN ) ILo,MIN2) 3]1 2
When the MOSFET power dissipations are known, the designer can calculate the required thermal impedance to
Two resistors program the Adaptive Voltage Positioning (AVP): RFB and RDRP. These components form a resistor divider, shown in Figures 27 and 28, between VDRP, VFB, and VOUT. Resistor RFB is connected between VOUT and the VFB pin of the controller. At no load, this resistor will conduct the very small internal bias current of the VFB pin. Therefore VFB should be kept below 10 k to avoid output voltage error due to the input bias current. If the RFB resistor is kept small, the VFB bias current can be ignored. Resistor RDRP is connected between the VDRP and VFB pins of the controller. At no load, these pins should be at an equal potential, and no current should flow through RDRP. In reality, the bias current coming out of the VDRP pin is likely to have a small positive voltage with respect to VFB. This current produces a small decrease in output voltage at no load, which can be minimized by keeping the RDRP resistor below 30 k. As load current increases, the voltage at the VDRP pin rises. The ratio of the RDRP and RFB resistors
http://onsemi.com
22
NCP5314
causes the voltage at the VFB pin to rise, reducing the output voltage. Figure 29 shows the DC effect of AVP, given an appropriate resistor ratio. To choose components, recall that the two resistors RFB and RDRP form a voltage divider. Select the appropriate resistor ratio to achieve the desired loadline. At no load, the output voltage is positioned 20 mV below the DAC output setting. The output voltage droop will follow the equation:
RCS1 CS1P
R RDRP ) RFB + g @ SENSE RFB RLL
(29)
where: g = gain of the current sense amplifiers (V/V); RSENSE = resistance of the sense element (m); RLL = load line resistance (m).
++ + + GVDRP COMP VID - 20 mV
L1 0A
CCS1 CS1N RCSx CSxP
Error Amp RDRP RFB VCORE
Lx 0A
CCSx CSxN
+ GVDRP
VDRP = VID
VFB = VID - 20 mV
IDRP = 0
IFB = 0
VCORE = VID + IBIASVFB w RFB
Figure 27. AVP Circuitry at No-Load
RCS1 CS1P ++ GVDRP COMP VID - 20 mV
L1 IMAX/2
CCS1 CS1N
Error Amp RDRP RFB
RCSx
CSxP
Lx IMAX/n
+ GVDRP
VDRP = VID + VFB = VID - 20 mV VCORE IMAX * RL * GVDRP IDRP IFB
CCSx CSxN IDRP = IMAX * RL * GVDRP/RDRP IFBK = IDRP VCORE = VID - IDRP w RFB = VID - IMAX w RL w GVDRP w RFB/RDRP
Figure 28. AVP Circuitry at Full-Load
0 -0.02 Spec Max -0.04 VOUT (V) -0.06 -0.08 Spec Min -0.10 -0.12 -0.14 0 10 20 30 IOUT (A) 40 50 60 VID - VOUT
It is easiest to select a value for RFB and then evaluate the equation to find RDRP. RLL is simply the desired output voltage droop divided by the output current. If a sense resistor is used to detect inductor current, then RSENSE will be the value of the sense resistor. If inductor sensing is used, RSENSE will be the resistance of the inductor, assuming that the current sense network equation (eq. 30) is valid. Refer to the discussion on Current Sensing for further information.
8. Current Sensing
Figure 29. The DC Effects of AVP vs. Load
Current sensing is used to balance current between different phases, to limit the maximum phase current and to limit the maximum system current. Since the current information, sensed across the inductor, is a part of the control loop, better stability is achieved if the current information is accurate and noise-free. The NCP5314
http://onsemi.com
23
NCP5314
introduces a novel feature to achieve the best possible performance: differential current sense amplifiers. Two sense lines are routed for each phase, as shown in Figure 28. For inductive current sensing, choose the current sense network (RCSx, CCSx, x = 1, 2, 3 or 4) to satisfy
RCSx @ CCSx + Lo (RL ) RPCB)
(30)
For resistive current sensing, choose the current sense network (RCSx, CCSx, x = 1, 2, 3 or 4) to satisfy
RCSx @ CCSx + Lo (Rsense)
(31)
This will provide an adequate starting point for RCSx and CCSx. After the converter is constructed, the value of RCSx (and/or CCSx) should be fine-tuned in the lab by observing the VDRP signal during a step change in load current. Tune the RCSx CCSx network by varying RCSx to provide a "square-wave" at the VDRP output pin with maximum rise time and minimal overshoot as shown in Figure 32.
9. Error Amplifier Tuning
Figure 30. VDRP Tuning Waveforms. The RC Time Constant of the Current Sense Network Is Too Long (Slow): VDRP and VOUT Respond Too Slowly.
After the steady-state (static) AVP has been set and the current sense network has been optimized, the Error Amplifier must be tuned. The gain of the Error Amplifier should be adjusted to provide an acceptable transient
Figure 31. VDRP Tuning Waveforms. The RC Time Constant of the Current Sense Network Is Too Short (Fast): VDRP and VOUT Both Overshoot.
Figure 32. VDRP Tuning Waveforms. The RC Time Constant of the Current Sense Network Is Optimal: VDRP and VOUT Respond to the Load Current Quickly Without Overshooting.
http://onsemi.com
24
NCP5314
response by increasing or decreasing the Error Amplifier's feedback capacitor (CAMP in the Applications Diagram). The bandwidth of the control loop will vary directly with the gain of the error amplifier. If CAMP is too large, the loop gain/bandwidth will be low, the COMP pin will slew too slowly and the output voltage will overshoot as shown in Figure 33. On the other hand, if CAMP is too small, the loop gain/bandwidth will be high, the COMP pin will slew very quickly and overshoot will occur. Integrator "wind up" is the cause of the overshoot. In this case, the output voltage will transition more slowly because COMP spikes upward as shown in Figure 34. Too much loop gain/bandwidth increases the risk of instability. In general, one should use the lowest loop gain/bandwidth possible to achieve acceptable transient response. This will insure good stability. If CAMP is optimal, the COMP pin will slew quickly but not overshoot and the output voltage will monotonically settle as shown in Figure 36. After the control loop is tuned to provide an acceptable transient response, the steady-state voltage ripple on the COMP pin should be examined. When the converter is operating at full steady-state load, the peak-to-peak voltage ripple (VPP) on the COMP pin should be less than 20 mVPP as shown in Figure 35. Less than 10 mVPP is ideal. Excessive ripple on the COMP pin will contribute to jitter.
10. Current Limit Setting
Figure 33. The Value of CAMP Is Too High and the Loop Gain/Bandwidth Too Low. COMP Slews Too Slowly Which Results in Overshoot in VOUT.
Figure 34. The Value of CAMP Is Too Low and the Loop Gain/Bandwidth Too High. COMP Moves Too Quickly, Which Is Evident from the Small Spike in Its Voltage When the Load Is Applied or Removed. The Output Voltage Transitions More Slowly Because of the COMP Spike.
When the output of the current sense amplifier (COx in the block diagram) exceeds the voltage on the ILIM pin, the part will latch off. For inductive sensing, the ILIM pin voltage should be set based on the inductor's maximum resistance (RLMAX). The design must consider the inductor's resistance increase due to current heating and ambient temperature rise. Also, depending on the current sense points, the circuit board may add additional resistance. In general, the temperature coefficient of copper is +0.39% per _C. If using a current sense resistor (RSENSE), the ILIM pin voltage should be set based on the maximum value of the sense resistor. To set the level of the ILIM pin:
Figure 35. At Full- Load the Peak- to- Peak Voltage Ripple on the COMP Pin Should Be Less than 20 mV for a Well- Tuned/Stable Controller. Higher COMP Voltage Ripple Will Contribute to Output Voltage Jitter.
Figure 36. The Value of CAMP Is Optimal. COMP Slews Quickly Without Spiking or Ringing. VOUT Does Not Overshoot and Monotonically Settles to Its Final Value.
http://onsemi.com
25
NCP5314
VILIM + (IOUT,LIM ) DILo 2) @ R @ GILIM
(32)
where: IOUT,LIM is the current limit threshold of the converter; ILo/2 is half the inductor ripple current; R is either (RLMAX + RPCB) or RSENSE; GILIM is the current sense to ILIM gain.
For the overcurrent protection to work properly, the current sense time constant (RC) should be slightly larger than the RL time constant. If the RC time constant is too fast, a step load change will cause the sensed current waveform to appear larger than the actual inductor current and will trip the current limit at a lower level than expected.
PACKAGE DIMENSIONS
32 PIN QFN, 7 x 7 mm MN SUFFIX CASE 485J-02 ISSUE B
-XA -YNOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.30 AND 0.35 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. 485J-01 OBSOLETE, NEW STANDARD 485J-02. MILLIMETERS MIN MAX 7.00 BSC 7.00 BSC 0.80 1.00 0.30 0.35 5.16 5.36 5.16 5.36 0.65 BSC 0.20 REF 0.00 0.05 0.35 0.45 2.85 2.95 2.85 2.95 0.47 REF 0.60 0.80 INCHES MIN MAX 0.276 BSC 0.276 BSC 0.031 0.039 0.012 0.014 0.203 0.211 0.203 0.211 0.025 BSC 0.008 REF 0.000 0.002 0.014 0.018 0.112 0.116 0.112 0.116 0.0185 REF 0.024 0.031
B
2 PL
0.15 (0.006) T
2 PL
0.15 (0.006) T TOP VIEW
0.10 (0.004) T R 0.08 (0.0031) T SIDE VIEW E M L
32 PL 8 9 16
J C K -TSEATING PLANE
DIM A B C D E F G J K L M N P R
EXPOSED PAD
P
4 PL 8 17
F N
1 32 25 24
D 32 PL NOTE 3 0.10 (0.004)
M
G TXY BOTTOM VIEW
http://onsemi.com
26
NCP5314
PACKAGE DIMENSIONS
LQFP-32 FTB SUFFIX CASE 873A-02 ISSUE A
-T-, -U-, -ZAE P V AE
8 17
A
32
4X 25
A1
0.20 (0.008) AB T-U Z
1
-TB B1 DETAIL Y
-U-
V1
DETAIL Y
BASE METAL
9
-Z9 S1 S
F
D
8X
M_ R
J
G -ABSEATING PLANE
DETAIL AD CE
SECTION AE-AE
-AC0.10 (0.004) AC 0.250 (0.010) H W X DETAIL AD K Q_
GAUGE PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE -AB- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS -T-, -U-, AND -Z- TO BE DETERMINED AT DATUM PLANE -AB-. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE -AC-. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -AB-. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE D DIMENSION TO EXCEED 0.520 (0.020). 8. MINIMUM SOLDER PLATE THICKNESS SHALL BE 0.0076 (0.0003). 9. EXACT SHAPE OF EACH CORNER MAY VARY FROM DEPICTION.
DIM A A1 B B1 C D E F G H J K M N P Q R S S1 V V1 W X
MILLIMETERS MIN MAX 7.000 BSC 3.500 BSC 7.000 BSC 3.500 BSC 1.400 1.600 0.300 0.450 1.350 1.450 0.300 0.400 0.800 BSC 0.050 0.150 0.090 0.200 0.500 0.700 12_ REF 0.090 0.160 0.400 BSC 1_ 5_ 0.150 0.250 9.000 BSC 4.500 BSC 9.000 BSC 4.500 BSC 0.200 REF 1.000 REF
INCHES MIN MAX 0.276 BSC 0.138 BSC 0.276 BSC 0.138 BSC 0.055 0.063 0.012 0.018 0.053 0.057 0.012 0.016 0.031 BSC 0.002 0.006 0.004 0.008 0.020 0.028 12_ REF 0.004 0.006 0.016 BSC 1_ 5_ 0.006 0.010 0.354 BSC 0.177 BSC 0.354 BSC 0.177 BSC 0.008 REF 0.039 REF
http://onsemi.com
27
0.20 (0.008)
0.20 (0.008) AC T-U Z
M
4X
EE EE EE EE
N
AC T-U Z
NCP5314
V2 is a trademark of Switch Power, Inc.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
http://onsemi.com
28
NCP5314/D

▲Up To Search▲

Price & Availability of NCP5314

	To Download NCP5314 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .